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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by T2800/D
Triacs
Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. * Blocking Voltage to 600 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * T2800 -- Four Quadrant Gating
MT2
T2800 SERIES
TRIACs 8 AMPERES RMS 200 thru 600 VOLTS
MT1 G
CASE 221A-04 (TO-220AB) STYLE 4
MAXIMUM RATINGS (TJ = 25C unless otherwise noted.)
Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to +100C, Gate Open) T2800 B D M RMS On-State Current (Conduction Angle = 360) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = +80C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 1 s) Average Gate Power Peak Gate Trigger Current (Pulse Width = 1 s) Operating Junction Temperature Range Storage Temperature Range (TC = +80C) IT(RMS) ITSM I2t PGM PG(AV) IGTM TJ Tstg Symbol VDRM 200 400 600 8 100 40 16 0.35 4 -40 to +100 -40 to +150 Amps Amps A2s Watts Watt Amps C C Value Unit Volts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.2 Unit C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data (c) Motorola, Inc. 1995
1
T2800 SERIES
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Peak On-State Voltage (Either Direction)* (IT = 30 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) T2800 MT2(+), G(-) T2800 MT2(-), G(-) T2800 MT2(-), G(+) T2800 TC = 25C TC = 100C VTM IGT -- -- -- -- 10 20 15 30 25 60 25 60 Symbol IDRM -- -- -- -- -- 1.7 10 2 2 Min Typ Max Unit A mA Volts mA
Gate Trigger Voltage (Continuous dc) (All Polarities) (VD = 12 Vdc, RL = 100 Ohms) (RL = 125 Ohms, VD = VDRM, TC = 100C) Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) T2800
VGT -- 0.2 IH -- tgt dv/dt(c) -- -- 15 1.6 10 30 -- -- 1.25 -- 2.5 --
Volts
mA
Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 s) Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100C) T2800
s V/s
dv/dt
V/s
*Pulse Test: Pulse Width
p 300 s, Duty Cycle p 2%.
B D M
100 -- 60
-- -- --
-- -- --
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (C)
FIGURE 1 - CURRENT DERATING
P(AV) , AVERAGE POWER DISSIPATION (WATTS) 100 12 10 8 6 4 2 0 0
FIGURE 2 - POWER DISSIPATION
95
FULL CYCLE SINUSOIDAL WAVEFORM
FULL CYCLE SINUSOIDAL WAVEFORM
MAXIMUM TYPICAL
90
85
80 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP)
2
4
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
2
Motorola Thyristor Device Data
T2800 SERIES
PACKAGE DIMENSIONS
-T- B F C
SEATING PLANE
T
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
S
4
Q
123
A U K
H Z L V G D N J R
STYLE 4: PIN 1. 2. 3. 4.
MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2
CASE 221A-04 (TO-220AB)
Motorola Thyristor Device Data
3
T2800 SERIES
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
4
*T2800/D*
Motorola Thyristor Device Data
T2800/D

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